High-Speed Laser Cutting Silicon-Glass Double Layer Wafer with Laser-Induced Thermal-Crack Propagation

This paper studied laser induced thermal-crack propagation (LITP) dicing of a glass-silicon double-layer wafer with high scanning speed. A defocusing continuous was used in the experimental system as volumetric heat source for glass layer and surface silicon layer. Based on principle propagation, commercial software ABAQUS simulated analysis, results temperature field thermal stress distribution low speed were compared. The experiment executed accordance simulation parameters. morphology cut section described by optical microscopy profilometer, combined results, non-synchronous process crack under revealed. Most importantly, nanoscale roughness obtained. 19 nm, that 9 nm.